Extended Defects Formation in Si Crystals by Clustering of Intrinsic Point Defects Studied by in-situ Electron Irradiation in an HREM

In situ irradiation experiments in a high resolution electron microscope JEOL-4000EX at room temperature resulted in discovery of the isolated and combined clustering of vacancies and selfinterstitial atoms on {111}and {113}-habit planes both leading to an extended defect formation in Si crystals. The type of the defect is strongly affected by the type of supersaturation of point defects depending on the crystal thickness during electron irradiation. Because of the existence of energy barriers against recombination of interstitials with the extended aggregates of vacancies, a large family of intermediate defect configurations (IDCs) is formed on {113}and {111}-habit planes at a low temperature under interstitial supersaturation in addition to the well-known {113}-defects of interstitial type. The formation of metastable IDCs inside vacancy aggregates prevents a way of recombination of defects in extended shape.